EFFECT OF SCALING OF INTERCONNECTIONS ON THE TIME DELAY OF VLSI CIRCUITSSARASWAT KC; MOHAMMADI F.1982; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 2; PP. 275-280; BIBL. 13 REF.Article

N-CHANNEL MOSFETS WITH WSI₂ GATEFARROKH MOHAMMADI; SARASWAT KC.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 2; PP. 24-25; BIBL. 9 REF.Article

LOW TEMPERATURE DIFFUSION OF BORON FROM DIBORANE USING CARBON DIOXIDE AS OXIDANT.SARASWAT KC; MEINDL JD.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 3; PP. 471-472; BIBL. 5 REF.Article

EFFECT OF SCALING OF INTERCONNECTIONS ON THE TIME DELAY OF VLSI CIRCUITSSARASWAT KC; FARROKH MOHAMMADI.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 4; PP. 645-650; BIBL. 13 REF.Article

PROPERTIES OF SPUTTERED TUNGSTENSILICIDE FOR MOS INTEGRATED CIRCUIT APPLICATIONSMOHAMMADI F; SARASWAT KC.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 2; PP. 450-454; BIBL. 11 REF.Article

THERMAL OXIDATION OF HEAVILY PHOSPHORUS-DOPED THIN FILMS OF POLYCRYSTALLINE SILICONSARASWAT KC; HARINDER SINGH.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 10; PP. 2321-2326; BIBL. 22 REF.Article

BREAKDOWN WALKOUT IN PLANAR P-N JUNCTIONSSARASWAT KC; MEINDL JD.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 6; PP. 813-819; BIBL. 10 REF.Article

A NEW BIPOLAR PROCESS-BORSENIC.SARASWAT KC; MEINDL JD.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 4; PP. 495-500; BIBL. 10 REF.Article

BORSENIC BIPOLAR PROCESS.SARASWAT KC; MEINDL JD.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 437-439Conference Paper

WORK FUNCTION OF WSI₂SARASWAT KC; FARROKH MOHAMMADI.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 2; PP. 18-19; BIBL. 6 REF.Article

A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON. I: THEORYMANDURAH MM; SARASWAT KC; KAMINS TI et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 10; PP. 1163-1171; BIBL. 21 REF.Article

A HIGH-VOLTAGE MOSFET IN POLYCRYSTALLINE SILICONFARROKH MOHAMMADI; SARASWAT KC; MEINDL JD et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 1; PP. 293-295; BIBL. 13 REF.Article

KINETICS OF THE THERMAL OXIDATION OF WSI₂MOHAMMADI F; SARASWAT KC; MEINDL JD et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 7; PP. 529-532; BIBL. 9 REF.Article

THIN FILM MOSFET'S FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICONLEE KF; GIBBONS JF; SARASWAT KC et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 35; NO 2; PP. 173-175; BIBL. 6 REF.Article

A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON. II: COMPARISON OF THEORY AND EXPERIMENTMANDURAH MM; SARASWAT KC; KAMINS TI et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 10; PP. 1171-1176; BIBL. 20 REF.Article

A MODEL FOR DOPANT INCORPORATION INTO GROWING SILICON EPITAXIAL FILMS. II: COMPARISON OF THEORY AND EXPERIMENTREIF R; KAMINS TI; SARASWAT KC et al.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 4; PP. 653-660; BIBL. 9 REF.Article

STRUCTURE AND STABILITY OF LOW PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS.KAMINS TI; MANDURAH MM; SARASWAT KC et al.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 6; PP. 927-932; BIBL. 16 REF.Article

ISOLATION OF ENTEROVIRUSES FROM SHEEP.RAO KM; SARASWAT KC; PATHAK RC et al.1972; INDIAN J. EXPER. BIOL.; INDIAN; DA. 1972; VOL. 10; NO 6; PP. 453-454; BIBL. 12REF.Serial Issue

ARSENIC SEGREGATION IN POLYCRYSTALLINE SILICONMANDURAH MM; SARASWAT KC; KAMINS TI et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 8; PP. 683-685; BIBL. 9 REF.Article

PHOSPHORUS DOPING OF LOW PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMSMANDURAH MM; SARASWAT KC; KAMINS TI et al.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 4; PP. 1019-1023; BIBL. 10 REF.Article

A MODEL FOR DOPANT INCORPORATION INTO GROWING SILICON EPITAXIAL FILMS. I: THEORYREIF R; KAMINS TI; SARASWAT KC et al.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 4; PP. 644-652; BIBL. 15 REF.Article

A HIGH VOLTAGE MOS SWITCH.SARASWAT KC; MEINDL JD; BERGER J et al.1975; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1975; VOL. 10; NO 3; PP. 136-142; BIBL. 10 REF.Article

PROPERTIES OF LOW PRESSURE CVD TUNGSTEN SILICIDE AS RELATED TO IC PROCESS REQUIREMENTSBRORS DL; FAIR JA; MONNIG KA et al.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 183-186Article

DOPANT SEGREGATION IN POLYCRYSTALLINE SILICONMANDURAH MM; SARASWAT KC; HELMS CR et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 11; PP. 5755-5763; BIBL. 29 REF.Article

A MONOLITHIC INTEGRATED CIRCUIT FIBRACATED IN LASER-ANNEALED POLYSILICONKAMINS TI; LEE KF; GIBBONS JF et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 1; PP. 290-293; BIBL. 8 REF.Article